Process for depositing a SiO.sub.x film having reduced intrinsic stress and/or reduced hydrogen content
US5750211A · kind A · utility
64Cited by
12References
29Claims
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Key dates
| Filing date | Jul 16, 1993 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Jul 16, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.