RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5753044A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Feb 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.