Method for inducing damage for gettering to single crystal silicon wafer
US5759087A · kind A · utility
8Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1995 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | May 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.