Shallow trench isolation with oxide-nitride/oxynitride liner

US5763315A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Siemens Aktiengesellschaft · DE
• Kabushiki Kaisha Toshiba · JP

Inventors

• John Benedict · New Paltz, US
• David M. Dobuzinsky · New Windsor, US
• Philip L. Flaitz · Newburgh, US
• Erwin Hammerl · Stormville, US
• Herbert L. Ho · New Windsor, US
• James F. Moseman · Glenham, US
• Herbert Palm · Hohenkirchen, DE
• Seiko Yoshida · Yokohama, JP
• Hiroshi Takato · Tokyo, JP

Key dates

• Filing date: Jan 28, 1997
• Grant date: Jun 9, 1998
• Expiry date: Jan 28, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/762
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.