Process for producing semiconductor integrated circuit
US5780328A · kind A · utility
12Cited by
2References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 7, 1997 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Apr 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
When the source and drain regions (an n.sup.- type semiconductor region and an n.sup.+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impurities for the punch-through stopper are suppressed from being supplied to the feeding portion (an n.sup.+ type semiconductor region) of the n-type well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.