Yasuko Yoshida
45Patents
12h-index
106Co-inventors
84Inventor score
Filing activity: Nov 27, 1989 → Jan 30, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090684A | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 156 | Expired |
| US7067864B2 | SRAM having an improved capacitor | Electricity | 126 | Expired |
| US7414117B2 | Nucleotide derivative and DNA microarray | Emerging Cross-Sectional Technologies | 40 | Expired |
| US7341697B2 | Reaction cell and operation method thereof | Performing Operations; Transporting | 27 | Expired |
| US7348230B2 | Manufacturing method of semiconductor device | Electricity | 21 | Expired |
| US5508540A | Semiconductor integrated circuit device and process of manufacturing the same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5143847A | Enzyme-fixed bioreactor | Chemistry; Metallurgy | 19 | Expired |
| US5408601A | Graphic editor | Physics | 17 | Expired |
| US6242323A | Semiconductor device and process for producing the same | Electricity | 15 | Expired |
| US6559027B2 | Semiconductor device and process for producing the sme | Electricity | 15 | Expired |
| US6057241A | Method of manufacturing a semiconductor integrated circuit device | Electricity | 13 | Expired |
| US5780328A | Process for producing semiconductor integrated circuit | Electricity | 12 | Expired |
| US6586807B2 | Semiconductor integrated circuit device | Electricity | 12 | Expired |
| US7200254B2 | Probe reactive chip, sample analysis apparatus, and method thereof | Physics | 12 | Expired |
| US5880497A | Semiconductor integrated circuit device having capacitance element and process of manufacturing the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6436753B1 | Semiconductor integrated circuit and method for manufacturing the same | Electricity | 10 | Expired |
| US6284625A | Method of forming a shallow groove isolation structure | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6635945B1 | Semiconductor device having element isolation structure | Electricity | 8 | Expired |
| US6713353B1 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 8 | Expired |
| US6881646B2 | Semiconductor device and process for producing the same | Electricity | 7 | Expired |
| US6348396B1 | Semiconductor device and production thereof | Electricity | 7 | Expired |
| US6764945B2 | Method of manufacturing a multilayer metallization structure with non-directional sputtering method | Electricity | 6 | Expired |
| US6753231B2 | Semiconductor integrated circuit and method for manufacturing the same | Electricity | 6 | Expired |
| US6562695B1 | Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing | Electricity | 6 | Expired |
| US6677194B2 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.