Apparatus and method for cleaning of semiconductor process chamber surfaces
US5788799A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Jun 11, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In accordance with the present invention, a temperature-controlled ceramic liner or barrier is used adjacent to process chamber surfaces during a plasma-comprising process, with the liner or barrier temperature being set to reduce the formation of deposits upon or to aid in the removal of deposits from the liner surface during the processing of a semiconductor substrate within the process chamber. In the alternative, cleaning of the process chamber surface is carried out after the semiconductor substrate is removed from the chamber, and the liner or barrier temperature is set to assist in the removal of deposits from the liner or barrier surface. Deposits accumulate on some process chamber surfaces faster than on others. Since the rate of deposit formation or removal is temperature dependent, the temperature-controlled ceramic liner may be constructed to enable independent temperature settings at different locations within the liner. When multiple temperature-controllable barriers are used, each barrier may be set at a different temperature in proportion to the deposit formation reduction or removal requirements in the area of the process chamber protected by the particular barrier…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.