High electron mobility transistor
US5796127A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1997 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Aug 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a first mixed crystal semiconductor layer of AlAs and InAs; applying a solution containing a material easily combining with fluorine to the surface of the first mixed crystal semiconductor layer exposed to the atmosphere so that the material combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer; and annealing the first mixed crystal semiconductor layer in a vacuum. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer exposed to the atmosphere combines with the material included in the solution and is removed together with the material, a first mixed crystal semiconductor layer having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer is avoided, resulting in a highly reliable semiconductor device with desired characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.