Selective i-line BARL etch process
US5807790A · kind A · utility
13Cited by
1References
16Claims
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Key dates
| Filing date | May 1, 1997 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | May 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photolithographic substrate mask patterning method which enables the reduction of changes in critical dimensions which occur in prior art etching of organic photoresist and the underlying organic i-line bottom anti-reflection layer (BARL) on a non-planar substrate. Based on the minor difference in the total carbon and oxygen content between the organic photoresist and the organic BARL, a differential in polarization is achieved using a pure N.sub.2 plasma for ion etching at certain selected conditions and a selectivity is achieved between the etch rate of the organic photoresist as compared to the etch rate of the organic BARL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.