Method for forming buried interconnect structue having stability at high temperatures
US5827762A · kind A · utility
18Cited by
17References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1997 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | May 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buried interconnect structure which is stable at the high temperatures involved in BiCMOS, bipolar, and CMOS transistor process flows, and a method of making the same. The interconnect structure is fully insulated and can be used to form stable, doped structures suitable for use as electrodes and gate structures in a CMOS process, or to form low resistance contacts to N or P-type silicon as part of a bipolar process. Because the interconnect structure is buried and fully insulated from surrounding structures, it may be used to form complex, multi-level devices having a minimized geometry and increased circuit density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.