Patent · US Expired

Method of manufacturing semiconductor mirror wafers

US5827779A · kind A · utility

16Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 19, 1996
Grant dateOct 27, 1998
Priority date
Expiry dateJul 19, 2016

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B33/00
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step and a single side final mirror polishing step. The method having the double side mirror polishing step is capable of higher flatness level wafer processing, suppression of fine dust or particles, thereby to increase the yield of semiconductor devices, higher productivity due to simplification of processes, higher quality processing with lower manufacturing cost than conventional methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.