Method to produce ultrathin porous silicon-oxide layer
US5830532A · kind A · utility
6Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1997 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Mar 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period of time to form a thin oxide film 10 thereon. Then the conditions in the chamber are altered so that voids 14 of a desired dimension are formed in the oxide film 10. Alternatively, a substrate 20 is subjected to specific conditions in the vacuum chamber whereat oxide islands 22 nucleate on the surface. As the islands grow, they eventually cover most of the surface leaving voids 24 of the desired size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.