Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same
US5831300A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor memory device has a semiconductor substrate, word line conductors and bit line conductors, and memory cells provided at intersections between the word line conductors and bit line conductors. Adjacent two memory cells for each bit line conductor form a memory cell pair unit structure, in which first semiconductor regions of the transistors of the adjacent two memory cells are united at their boundary into a single region and are connected to one of the bit line conductors via a bit line connection conductor, the gate electrodes of the transistors of the adjacent two memory cells are connected to word line conductors adjacent to each other, respectively, the second semiconductor regions of the transistors of the adjacent two memory cells are connected to the respective information storage capacitors. A series of memory cell pair unit structures formed under one bit line conductor is positionally shifted with respect to the series of memory cell pair unit structures formed under adjacent first and second bit line conductors on opposite sides of the one bit line conductor, respectively, such that a second information storage capacitor of a memory cell pair unit structu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.