Metal complex source reagents for chemical vapor deposition
US5840897A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0464
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metalorganic complex of the formula: EQU MA.sub.y X wherein: PA1 M is a y-valent metal; PA1 A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X; PA1 y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and PA1 X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.