Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
US5841623A · kind A · utility
9Cited by
19References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1995 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chuck for processing a substrate includes a chuck body having a dielectric layer, the dielectric layer including a substrate receiving surface, the substrate receiving surface being at least as large as a substrate to be processed on the chuck. The chuck further includes an electrode buried in the chuck body, the electrode being larger than the substrate receiving surface such that edges of a radio frequency field generated by the electrode are all disposed beyond the substrate receiving surface. A method for depositing a film in a radio frequency biased plasma chemical deposition system is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.