Liquid source formation of thin films using hexamethyl-disilazane
US5843516A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 16, 1996 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Sep 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.