Liquid source formation of thin films using hexamethyl-disilazane
US5849071A · kind A · utility
14Cited by
3References
2Claims
0Family size
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Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.