Process for chlorine trifluoride chamber cleaning
US5849092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1997 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.