Memory cell programming with controlled current injection
US5856946A · kind A · utility
26Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1997 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Apr 9, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory with controlled gate current injection during memory cell programming wherein programming circuitry applies a time-varying voltage to a control gate of the memory cell during a programming cycle. The time-varying voltage yields a substantially constant rate of electron flow from the channel region to the floating gate during the programming cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.