Light-emitting semiconductor device using gallium nitride compound
US5862167A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.