Temperature controlling method and apparatus for a plasma processing chamber
US5863376A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1996 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Jun 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32522
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.