Borderless vias with HSQ gap filled patterned metal layers
US5866945A · kind A · utility
26Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 16, 1997 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.