Mixed mode RAM/ROM cell using antifuses
US5870327A · kind A · utility
19Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Nov 3, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mixed mode RAM/ROM cell includes a volatile memory cell and an antifuse coupled to the cell. In an array of mixed mode memory cells, addressing circuitry is coupled to the volatile memory cells and programming circuitry is coupled to the antifuses. After an antifuse is programmed, the associated memory cell is transformed from a volatile memory to a non-volatile memory. Specifically, during normal operation, a standard supply voltage is provided to all antifuses. Thus, after a power down or power fluctuation, the programmed antifuses ensure subsequent configuration of their respective volatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.