High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
US5876573A · kind A · utility
31Cited by
25References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Jul 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.