High dielectric TiO.sub.2 -SiN composite films for memory applications
US5876788A · kind A · utility
64Cited by
5References
31Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 16, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Jan 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.