Virtual hard mask for etching
US5876903A · kind A · utility
20Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Dec 31, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of hardening photoresist (24) by bombardment with ionized particles (42), such as argon. Ionic bombardment causes formation of a hardened skin (22) on the exposed top (30) and side walls (32) of the photoresist (24). The hardened skin erodes at a reduced rate during etching and is less likely to react with products created during etching, thereby allowing etching of more accurate line widths and gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.