Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
US5882401A · kind A · utility
7Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Aug 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.