Integrated arc and polysilicon etching process
US5885902A · kind A · utility
10Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Nov 5, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.