Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US5897375A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Oct 20, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1472
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.