Plasma uniformity control for an inductive plasma source
US5897712A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1996 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Jul 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention reduces those portions of the RF induction field over areas of the wafer experiencing higher etch or deposition rates than those experienced elsewhere on the wafer. Such a controlled reduction of those portions of the RF induction field whose attenuation results in reducing non-uniformity in the etch or deposition rate distribution is obtained by incorporating a plasma uniformity control apparatus into the inductively coupled plasma reactor. The incorporated plasma uniformity control apparatus for controlling the RF induction field produced by the antenna includes one or more conductive bodies which are disposed adjacent to one or more of the radiating elements of the antenna.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.