Method for fabricating a titanium resistor

US5899724A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Siemens Aktiengesellschaft · DE

Inventors

• David M. Dobuzinsky · New Windsor, US
• Stephen G. Fugardi · New Milford, US
• Erwin Hammerl · Stormville, US
• Herbert L. Ho · New Windsor, US
• Samuel C. Ramac · Beacon, US
• Alvin W. Strong · South Burlington, US

Key dates

• Filing date: May 9, 1996
• Grant date: May 4, 1999
• Expiry date: May 9, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/474

Abstract

According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.