Deposition of a conductor in a via hole or trench
US5918149A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1996 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Feb 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present semiconductor device and method of fabrication thereof includes the provision of a trench or via hole in a dielectric, with a barrier layer thereon extending into the trench or via hole. A layer of titanium is provided over the barrier layer, also extending into the trench or via hole, and aluminum or aluminum alloy is provided over the titanium layer. The barrier layer provides good conformal coverage while also preventing outgassing of the dielectric from adversely affecting the conductor. The barrier layer also serves as a wetting agent for the deposition and flowing of aluminum or aluminum alloy. The titanium layer can be extremely thin, or non-existent, so as to avoid significant growth of TiAl.sub.3 and the problems attendant thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.