Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing
US5926737A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1997 |
| Grant date | Jul 20, 1999 |
| Priority date | — |
| Expiry date | Aug 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of using titanium chloride to etchback CVD-Ti on a patterned oxide wafer and the product formed by this process. Titanium is deposited onto a wafer composed of a silicon base and a pattern oxide layer which exposes portions of the silicon. The titanium is deposited onto the wafer by CVD-Ti. The titanium is deposited as metallic Ti on the oxide layer and reacts with the silicon substrate to form titanium silicide. The wafer is then exposed to a flow of titanium tetrachloride (TiCl.sub.4) gas. The TiCl.sub.4 etches away the metallic Ti on the oxide layer and does not substantially etch the titanium silicide. Optionally titanium nitride and tungsten may then be deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.