DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films
US5930106A · kind A · utility
38Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1996 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Jul 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between said first and second plates, with the dielectric layer being dominated by electrode-limited conduction, which includes tantalum pentoxide and silicon nitride, or a combination of the two. In a preferred implementation, one of the two capacitor plates is formed from a silicon-germanium layer, the second plate is formed from a metal and the dielectric layer is formed from tantalum pentoxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.