Shallow drain extension formation by angled implantation
US5935867A · kind A · utility
9Cited by
18References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a shallow, lightly doped region in a semiconductor device. The method comprises the steps of providing a semiconductor substrate having a surface; growing an oxide layer on the substrate, the oxide having a thickness; depositing a layer of polysilicon on the oxide; patterning the polysilicon layer and the oxide layer to provide a gate structure; and implanting into the substrate a source and a drain region about the gate structure at an angle less than 90 degrees with respect to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.