Patent · US Expired

Method of producing acceleration sensors

US5937275A · kind A · utility

48Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 27, 1997
Grant dateAug 10, 1999
Priority date
Expiry dateOct 27, 2017

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P15/0802
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.