Method of producing acceleration sensors
US5937275A · kind A · utility
48Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Oct 27, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/0802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.