Capacitive probe for in situ measurement of wafer DC bias voltage
US5942889A · kind A · utility
8Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.