Valentin Todorov
16Patents
11h-index
48Co-inventors
68Inventor score
Filing activity: May 28, 1996 → Mar 14, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6447636B1 | Plasma reactor with dynamic RF inductive and capacitive coupling control | Electricity | 127 | Expired |
| US7718538B2 | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates | Electricity | 84 | Active |
| US6507155B1 | Inductively coupled plasma source with controllable power deposition | Electricity | 80 | Expired |
| US6962644B2 | Tandem etch chamber plasma processing system | Electricity | 63 | Expired |
| US6617794B2 | Method for controlling etch uniformity | Electricity | 55 | Expired |
| US6706138B2 | Adjustable dual frequency voltage dividing plasma reactor | Electricity | 24 | Expired |
| US6399507B1 | Stable plasma process for etching of films | Electricity | 20 | Expired |
| US7777152B2 | High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck | Electricity | 20 | Active |
| US5801386A | Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same | Electricity | 16 | Expired |
| US6356097B1 | Capacitive probe for in situ measurement of wafer DC bias voltage | Electricity | 15 | Expired |
| US7674394B2 | Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution | Electricity | 11 | Active |
| US6660127B2 | Apparatus for plasma etching at a constant etch rate | Electricity | 11 | Expired |
| US6447637B1 | Process chamber having a voltage distribution electrode | Electricity | 9 | Expired |
| US5942889A | Capacitive probe for in situ measurement of wafer DC bias voltage | Electricity | 8 | Expired |
| US7552736B2 | Process for wafer backside polymer removal with a ring of plasma under the wafer | Electricity | 6 | Active |
| US7678710B2 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.