Plasma source for HDP-CVD chamber
US5944902A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1998 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jun 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.