Field emission displays with reduced light leakage
US5956611A · kind A · utility
9Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1997 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Sep 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/463
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.