Suppression of boron segregation for shallow source and drain junctions in semiconductors
US5960322A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method in the manufacture of ultra-large scale integrated circuit semiconductor devices suppresses boron loss due to segregation into the screen oxide during the boron activation rapid thermal anneal. A nitridation of the screen oxide is used to incorporate nitrogen into the screen oxide layer prior to boron implantation for ultra-shallow, source and drain extension junctions. A second nitridation of a second screen oxide is used prior to boron implantation for deeper, source and drain junctions. This method significantly suppresses boron diffusion and segregation away from the silicon substrate which reduces series resistance of the complete source and drain junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.