Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at high temperatures

US5962069A · kind A · utility

Assignees

• Symetrix, Inc. · US
• Siemens Aktiengesellschaft · DE

Inventors

• Gunther Schindler · Hersbruck, DE
• Walter Hartner · Munich, DE
• Carlos Mazure · Austin, US
• Narayan Solayappan · Colorado Springs, US
• Vikram Joshi · Los Gatos, US
• Gary F. Derbenwick · Colorado Springs, US

Key dates

• Filing date: Jul 25, 1997
• Grant date: Oct 5, 1999
• Expiry date: Jul 25, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A liquid precursor containing a metal is applied to a first electrode, dried in air at a first temperature of 160.degree. C. and then a second temperature of 260.degree. C., RTP baked at a temperature of 300.degree. C. in oxygen, RTP baked at a temperature of 650.degree. C. in nitrogen, and annealed at a temperature of 800.degree. C. in nitrogen to form a strontium bismuth tantalate layered superlattice material. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800.degree. C. in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600.degree. C. or less. In this manner, a high electronic quality thin film of a layered superlattice material is fabricated without a high-temperature oxygen anneal.