Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle
US5966024A · kind A · utility
10Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Jan 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for measuring process induced damage, such as damage experienced during plasma etching or ion implementation, utilize a differential amplifier having multi-layer antennas (capacitors) of different sizes formed on respective inputs. Measurement of .DELTA.Ids (the difference between Ids.sub.1 and Ids.sub.2 off a MOSFET of the differential pair) or .DELTA.Idlin provides a sensitive and accurate measure of process induced damage. The techniques can be applied to monitor process induced damage while the manufacturing process is ongoing or as a measure of quality of the finished product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.