Method of manufacturing MOS components having lightly doped drain structures
US5966604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Jul 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing MOS components having lightly doped drains wherein the implanting type ion used is different than that used in the formation of the source/drain regions. The present invention also includes the use of a tilt implantation angle accompanied by substrate rotation during the implantation process to form lightly doped drain structures on two sides of the source/drain regions. The mask is the same for the formation of the source/drain regions as that for the formation of the lightly doped drain regions. The method of manufacturing MOS components having lightly doped drains according to this invention has fewer manufacturing processes for the formation of spacers than the conventional methods. Moreover, the reduction in spacer production results in an increased contact surface area for subsequent contact window formation, thereby lowering contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.