Patent · US Expired

Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment

US5976261A · kind A · utility

69Cited by
8References
42Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 11, 1996
Grant dateNov 2, 1999
Priority date
Expiry dateJul 11, 2016

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/45565
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method and apparatus for multi-zone injection apparatus of multiple process gases onto a work piece during manufacture. The multi-zone injection apparatus uses a gas injection plate with multiple injection zones to deliver the multiple process gases into the chamber for deposition onto the work piece (for example, a silicon wafer). The gas showerhead separates the multiple process in a manner that avoids premixing the process gases, thereby minimizing gas-phase nucleation and particulate generation. The showerhead also allows real-time independent control over the gas flow rates in N channels to achieve deposition uniformity. Different gases can be configured in adjacent channels to provide M zones of multi-gas radial control.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.