Trench isolation process using nitrogen preconditioning to reduce crystal defects
US5985735A · kind A · utility
33Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subjected to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.