Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports
US5988187A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1996 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jul 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.