Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US5989652A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jan 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A titanium/titanium nitride film stack can be formed with reduced amounts of impurity by depositing onto a substrate a film of titanium using plasma-enhanced chemical vapor deposition of titanium tetrachloride and hydrogen. This film is then subjected to a hydrogen/argon plasma which significantly reduces the chlorine content of the titanium film. The titanium film can then be subjected to an ammonia plasma which will form a thin layer of titanium nitride which is then coated with a thick layer of titanium nitride using plasma-enhanced chemical vapor deposition of titanium tetrachloride and ammonia. The hydrogen/argon anneal significantly reduces the chlorine content of the titanium film and thus the chlorine content at the titanium substrate interface, particularly when the substrate contains aluminum. This enhances the overall reliability of the formed product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.