Construction of a tantalum nitride film on a semiconductor wafer

US5989999A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Timothy E. Levine · Santa Clara, US
• Ling Chen · Sunnyvale, US
• Mei Chang · San Jose, US
• Roderick C. Mosely · Pleasanton, US
• Karl A. Littau · Palo Alto, US
• Ivo Raaijmakers · Bilthoven, NL

Key dates

• Filing date: Sep 26, 1997
• Grant date: Nov 23, 1999
• Expiry date: Sep 26, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76862
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.