Ling Chen
89Patents
36h-index
71Co-inventors
91Inventor score
Filing activity: Mar 13, 1995 → May 31, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6050506A | Pattern of apertures in a showerhead for chemical vapor deposition | Chemistry; Metallurgy | 589 | Expired |
| US6916398B2 | Gas delivery apparatus and method for atomic layer deposition | Electricity | 560 | Expired |
| US6498091B1 | Method of using a barrier sputter reactor to remove an underlying barrier layer | Electricity | 520 | Expired |
| US7204886B2 | Apparatus and method for hybrid chemical processing | Chemistry; Metallurgy | 471 | Expired |
| US6099649A | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal | Electricity | 417 | Expired |
| US6402806B1 | Method for unreacted precursor conversion and effluent removal | Electricity | 395 | Expired |
| US7591907B2 | Apparatus for hybrid chemical processing | Chemistry; Metallurgy | 350 | Active |
| US6171661A | Deposition of copper with increased adhesion | Chemistry; Metallurgy | 299 | Expired |
| US6110530A | CVD method of depositing copper films by using improved organocopper precursor blend | Chemistry; Metallurgy | 245 | Expired |
| US6607976B2 | Copper interconnect barrier layer structure and formation method | Electricity | 241 | Expired |
| US6784096B2 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Electricity | 114 | Expired |
| US7081271B2 | Cyclical deposition of refractory metal silicon nitride | Electricity | 109 | Expired |
| US6838125B2 | Method of film deposition using activated precursor gases | Chemistry; Metallurgy | 109 | Expired |
| US6660622B2 | Process for removing an underlying layer and depositing a barrier layer in one reactor | Electricity | 107 | Expired |
| US6772072B2 | Method and apparatus for monitoring solid precursor delivery | Chemistry; Metallurgy | 104 | Expired |
| US7186385B2 | Apparatus for providing gas to a processing chamber | Emerging Cross-Sectional Technologies | 86 | Expired |
| US6905541B2 | Method and apparatus of generating PDMAT precursor | Emerging Cross-Sectional Technologies | 85 | Expired |
| US6309713A | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition | Electricity | 78 | Expired |
| US7026238B2 | Reliability barrier integration for Cu application | Electricity | 78 | Expired |
| US5740009A | Apparatus for improving wafer and chuck edge protection | Electricity | 73 | Expired |
| US5989999A | Construction of a tantalum nitride film on a semiconductor wafer | Electricity | 69 | Expired |
| US6953742B2 | Tantalum barrier layer for copper metallization | Electricity | 63 | Expired |
| US6562715B1 | Barrier layer structure for copper metallization and method of forming the structure | Electricity | 60 | Expired |
| US6620956B2 | Nitrogen analogs of copper II &bgr;-diketonates as source reagents for semiconductor processing | Chemistry; Metallurgy | 59 | Expired |
| US6955211B2 | Method and apparatus for gas temperature control in a semiconductor processing system | Electricity | 54 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.